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MJE182G

Manufacturer:

On Semiconductor

Mfr.Part #:

MJE182G

Datasheet:
Description:

BJTs TO-225-3 Through Hole NPN 12.5 W Collector Base Voltage (VCBO):100 V Collector Emitter Voltage (VCEO):80 V Emitter Base Voltage (VEBO):7 V

ParameterValue
Voltage Rating (DC)80 V
Length7.7978 mm
Width2.9972 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height11.0998 mm
PackagingBulk
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Contact PlatingTin
Frequency50 MHz
Number of Elements1
Current Rating3 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation12.5 W
Power Dissipation12.5 W
Max Collector Current3 A
Collector Emitter Breakdown Voltage80 V
Transition Frequency50 MHz
Element ConfigurationSingle
Max Frequency50 MHz
Collector Emitter Voltage (VCEO)80 V
Gain Bandwidth Product50 MHz
Collector Base Voltage (VCBO)100 V
Collector Emitter Saturation Voltage1.7 V
Emitter Base Voltage (VEBO)7 V
hFE Min50
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current100 nA
Transistor TypeNPN

Stock: 6

Distributors
pcbx
Unit Price$0.42019
Ext.Price$0.42019
QtyUnit PriceExt.Price
1$0.42019$0.42019
10$0.39001$3.90010
25$0.36200$9.05000
50$0.33600$16.80000
100$0.29892$29.89200
300$0.26593$79.77900
500$0.23658$118.29000
1000$0.22602$226.02000
3000$0.21593$647.79000
5000$0.20629$1031.45000